| Autor: |
Chen, Tianniu, Cameron, Thomas M., Nguyen, Shawn D., Stauf, Gregory T., Peters, David W., Maylott, Leah, Li, Weimin, Xu, Chongying, Roeder, Jeffrey F., Hendrix, Bryan C., Hilgarth, Monica, Niinisto, Jaakko, Kukli, Kaupo, Ritala, Mikko, Leskela, Markku |
| Zdroj: |
ECS Transactions; October 2008, Vol. 16 Issue: 4 |
| Abstrakt: |
Five novel zirconium precursors - bis(N,N'-diisopropyl-1,3-propanediamide) zirconium (TCZR 1), tris(ethylmethylamide)(N,N,N'-trimethyl-1,2-ethaneamide-amine zirconium (TCZR 3), tris(dimethylamide)(N-ethyl-N',N'-dimethyl-1,2-ethaneamide-amine) zirconium (TCZR 4), mono-(N,N'-dimethyl-1,2-ethanediamide)-bis(cyclopentadienyl) zirconium (TCZR 5) and tris(ethylmethylamide)(N-ethyl-N',N'-dimethyl-1,2-ethaneamide-amine) zirconium (TCZR 6) have been synthesized and characterized by NMR, TGA, DSC and EA. The volatility of three precursors was measured by a Knudsen cell technique. The deposition behavior of these materials was evaluated in an ASM EmerAldTM ALD reactor or an ASM F-120 crossflow reactor. Self-limiting deposition of ZrO2 films was observed with temperatures up to 300 {degree sign}C when used with oxygen plasma or ozone as the oxidant, as compared to more CVD-like behavior using bis(N, N'-di-tert-butyl-1,2-ethanediamide) zirconium (TCZR 2) and tetrakis(ethylmethylamide) zirconium (TEMAZ) under the same conditions. The resulting ZrO2 films from these novel precursors showed good step coverage (> 80%) on high aspect ratio structures, low carbon incorporation (< 2 atom%), high permittivity cubic/tetragonal phase, and growth rates comparable to TEMAZ based on analysis using X-ray diffraction, SIMS, and sputter depth profile AES. These results make the novel precursors promising candidates for ALD of high-k materials as storage capacitors in DRAM applications. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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