| Autor: |
Renz, Arne Benjamin Benjamin, Vavasour, Oliver J, Gammon, Peter Michael, Li, Fan, Dai, Tianxiang, Baker, Guy W C, Grant, Nicholas E, Murphy, John D, Mawby, P. A., Shah, Vishal Ajit, Gott, James |
| Zdroj: |
ECS Transactions; May 2022, Vol. 108 Issue: 2 |
| Abstrakt: |
An investigation into the effect of deposition, growth and conditioning of the SiO2/SiC interface in MOS capacitors is performed, where the enhancement of reliability is characterised. Various methods of oxide formation are compared: ALD, LPCVD and thermally grown. ALD-deposited oxides were post-deposition annealed in nitrous oxide ambient, resulting in average flatband voltages of 0.63 V and low DITlevels, down to 7 x 1011cm-2eV-1at EC-ET=0.2 eV. These samples also outperformed their counterparts in terms of high leakage and constant voltage TDDB performance, which was done at 175°C, averaging breakdown electric fields of 9.84 MV/cm and a 63% failure stress time of 11220 s when stressed at 8 MV/cm. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
