| Autor: |
Zhong, Ziping, Liu, Xin, Li, Ling, Han, Zeyao, He, Yin, Xu, Xiaobao, Hai, Jiefeng, Zhu, Rihong, Yu, Jiangsheng |
| Zdroj: |
SCIENCE CHINA Chemistry; 20220101, Issue: Preprints p1-9, 9p |
| Abstrakt: |
Narrow bandgap non-fullerene acceptors (NFAs) are relevant as key materials components for the fabrication of near-infrared (NIR) organic solar cells (OSCs) and organic photodiodes (OPDs) thanks to their complementary absorption, tunable energy levels, and enhanced stability. However, high-performance NIR photodetectors are still scarce due to the absence of narrow bandgap NFAs. Herein, an asymmetric A-D-π-A type NFA, named ABTPV-S, with a broad optical absorption approaching 1,000 nm is designed and synthesized through integrating alkylthio side chains and a vinylene π-bridge. The optimal inverted OPD device exhibits an excellent performance with a photoresponsivity of 0.39 A W−1, a noise current of 2.25×10−14A Hz−0.5, a specific detectivity (D*) of 3.43×1012Jones at 840 nm, and linear dynamic range (LDR) of 140 dB. In addition, the rise and fall times for ABTPV-S-based OPDs also reach 1.07 and 0.71 µs, respectively. ABTPV-S-based OPDs exhibit a high Dover 1012Jones at 950 nm, which is a competitive result for the self-powered photodiode-type NIR OPDs. These findings highlight the outstanding potential of asymmetric A-D-π-A type NIR NFAs for high-performance OPDs competing with their silicon counterparts. |
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