One-transistor memory element

Autor: Yin, Shizhuo, Guo, Ruyan, Poghosyan, A. R., Hovsepyan, R. K., Aghamalyan, N. R., Kafadaryan, Y. A., Ayvazyan, H. L., Mnatsakanyan, H. G.
Zdroj: Proceedings of SPIE; October 2022, Vol. 12229 Issue: 1 p122290B-122290B-6, 1100617p
Databáze: Supplemental Index