| Autor: |
Ramos, Maria, Marques-Moros, Francisco, Esteras, Dorye L., Mañas-Valero, Samuel, Henríquez-Guerra, Eudomar, Gadea, Marcos, Baldoví, José J., Canet-Ferrer, Josep, Coronado, Eugenio, Calvo, M. Reyes |
| Zdroj: |
ACS Applied Materials & Interfaces; July 2022, Vol. 14 Issue: 29 p33482-33490, 9p |
| Abstrakt: |
Single-layer semiconducting transition metal dichalcogenides (2H-TMDs) display robust excitonic photoluminescence emission, which can be improved by controlled changes to the environment and the chemical potential of the material. However, a drastic emission quench has been generally observed when TMDs are stacked in van der Waals heterostructures, which often favor the nonradiative recombination of photocarriers. Herein, we achieve an enhancement of the photoluminescence of single-layer MoS2on top of van der Waals FePS3. The optimal energy band alignment of this heterostructure preserves light emission of MoS2against nonradiative interlayer recombination processes and favors the charge transfer from MoS2, an n-type semiconductor, to FePS3, a p-type narrow-gap semiconductor. The strong depletion of carriers in the MoS2layer is evidenced by a dramatic increase in the spectral weight of neutral excitons, which is strongly modulated by the thickness of the FePS3underneath, leading to the increase of photoluminescence intensity. The present results demonstrate the potential for the rational design of van der Waals heterostructures with advanced optoelectronic properties. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
