| Autor: |
Tominaga, Takaaki, Iwamatsu, Toshiaki, Nakao, Yukiyasu, Amishiro, Hiroyuki, Watanabe, Hiroshi, Miura, Naruhisa, Yamakawa, Satoshi, Nakata, Shuhei |
| Zdroj: |
Materials Science Forum; May 2022, Vol. 1062 Issue: 1 p447-451, 5p |
| Abstrakt: |
The influence of the recovery characteristics on the switching behavior of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with different switching speeds was investigated. A comparative analysis of the devices with different recovery characteristics revealed an increase in the turn-on loss (Eon) owing to the higher output capacitance charge (Qoss) and reverse recovery charge (Qrr) in the recovery arm. On the other hand, a higher Qoss in the recovery arm resulted in a lower turn-off loss (Eoff). In addition, an increase in Qoss and Qrr further influenced Eon and Eoff at a higher switching speed. Furthermore, a higher Qrr observed at a higher switching speed indicated a more significant impact of Qrr on Eon at a high switching speed than that of Qoss. The findings clarified in this study highlight the necessity of focusing the recovery characteristics to ensure a desirable switching loss of SiC MOSFETs. |
| Databáze: |
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