Review of Sublimation Growth of SiC Bulk Crystals

Autor: Wellmann, Peter J., Arzig, Matthias, Ihle, Jonas, Kollmuss, Manuel, Steiner, Johannes, Mauceri, Marco, Crippa, Danilo, La Via, Francesco, Salamon, Michael, Uhlmann, Norman, Roder, Melissa, Danilewsky, Andreas N., Nguyen, Binh Duong, Sandfeld, Stefan
Zdroj: Materials Science Forum; May 2022, Vol. 1062 Issue: 1 p104-112, 9p
Abstrakt: The review on bulk growth of SiC includes a basic overview on the widely used physical vapor transport method for processing of 4H-SiC boules as well as the discussion of three current research topics: (a) Sublimation bulk growth of large area, freestanding cubic SiC, (b) in-situ Visualization of the PVT Process using 2D and 3D X-ray based imaging and (c) prediction of dislocation formation and motion in SiC using a continuum model of dislocation dynamics (CDD).
Databáze: Supplemental Index