| Autor: |
Jousseaume, Yann, Cauwet, François, Ferro, Gabriel |
| Zdroj: |
Materials Science Forum; May 2022, Vol. 1062 Issue: 1 p8-12, 5p |
| Abstrakt: |
In view of obtaining a step bunched morphology on large 4H-SiC surfaces, a sandwich configuration is investigated. A piece of silicon is melted between two 4H-SiC 4° off wafers, allowing a better spreading of the liquid than a Si drop approach. This successfully leads to highly step-bunched surfaces, though with irregular steps. The most regular step and terrace stuctures were found to be the result of epitaxial growth via a dissolution-precipitation process occuring from the edges to the center of the wafers. This is probably caused by radio-frequency induced electromagnetic convection within liquid Si. This process is quenched when using smaller liquid thickness. |
| Databáze: |
Supplemental Index |
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