| Autor: |
Sudharsanan, R., Feng, Z. C., Perkowitz, S., Rohatgi, A., Pollard, K. T., Erbil, A. |
| Zdroj: |
Journal of Electronic Materials; May 1989, Vol. 18 Issue: 3 p453-455, 3p |
| Abstrakt: |
Single crystal Cd1−xMnxTe (x=0.10–0.30) films have been grown by metalorganic vapor deposition (MOCVD) on (111) GaAs substrates with and without CdTe buffer layers, at substrate temperatures of 380° to 450° C. Infrared phonon spectra reveal that the films grown at 420° C substrate temperature have reasonable Mn concentration (>10%) and are of good quality in agreement with Raman measurements. Spectral analysis also gives values for Mn concentration that agrees with photoluminescence measurements, and determines film thickness. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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