| Abstrakt: |
It is widely accepted that for the very smallest grain sizes (typically below 20 – 30 nm), dislocations play no significant role in the deformation of nanocrystalline materials. However, the grain-boundary mechanisms responsible for the reported decrease in strength with decreasing grain size in this regime (the ‘inverse Hall–Petch effect’) remain unclear. Here, we demonstrate by molecular-dynamics simulation that, in the absence of both grain growth and any dislocations, nanocrystalline fcc metals deform via a mechanism involving an intricate interplay between grain-boundary sliding and grain-boundary diffusion. By quantitatively reproducing the well-known Coble-creep formula for coarse-grained materials, we show that the ‘inverse Hall–Petch effect’ arises from sliding-accommodated grain-boundary diffusion creep. Previous, apparently contradictory, suggestions that GB sliding, on the one hand, or GB-diffusion creep, on the other, are responsible for this behavior can thus be reconciled as originating from one and the same deformation mechanism. We discuss the reasons why we believe that these simulations also capture the room-temperature deformation behavior of nanocrystalline fcc metals in the absence of dislocation nucleation and microcracking. |
