Excited State Spectroscopy of Boron Vacancy Defects in Hexagonal Boron Nitride Using Time-Resolved Optically Detected Magnetic Resonance

Autor: Baber, Simon, Malein, Ralph Nicholas Edward, Khatri, Prince, Keatley, Paul Steven, Guo, Shi, Withers, Freddie, Ramsay, Andrew J., Luxmoore, Isaac J.
Zdroj: Nano Letters; January 2022, Vol. 22 Issue: 1 p461-467, 7p
Abstrakt: We report optically detected magnetic resonance (ODMR) measurements of an ensemble of spin-1 negatively charged boron vacancies in hexagonal boron nitride. The photoluminescence decay rates are spin-dependent, with intersystem crossing rates of 1.02 ns–1and 2.03 ns–1for the mS= 0 and mS= ±1 states, respectively. Time gating the photoluminescence enhances the ODMR contrast by discriminating between different decay rates. This is particularly effective for detecting the spin of the optically excited state, where a zero-field splitting of |DES| = 2.09 GHz is measured. The magnetic field dependence of the photoluminescence exhibits dips corresponding to the ground (GSLAC) and excited-state (ESLAC) anticrossings and additional anticrossings due to coupling with nearby spin-1/2 parasitic impurities. Comparison to a model suggests that the anticrossings are mediated by the interaction with nuclear spins and allows an estimate of the ratio of the singlet to triplet spin-dependent relaxation rates of κ0/κ1= 0.34.
Databáze: Supplemental Index