| Autor: |
Wostyn, Kurt, Arimura, Hiroaki, Kimura, Yosuke, Hikavyy, Andriy, Rondas, Dirk, Conard, Thierry, Ragnarsson, Lars Åke, Horiguchi, Naoto |
| Zdroj: |
Diffusion and Defect Data Part B: Solid State Phenomena; February 2021, Vol. 314 Issue: 1 p49-53, 5p |
| Abstrakt: |
The steam oxidation of SiGe shows a transition from Si-like to Ge-like oxidation behavior depending on Ge concentration and oxidation temperature. Ge-like oxidation is described by the generation of oxygen vacancies (VO) at the interface between the oxide and SiGe virtual substrate. [1] Due to the different oxidation behavior, the presence of a Ge-oxide-free interfacial layer (IL) can suppress SiGe oxidation. [2] Here we show how a passivating interfacial layer can be grown using low-pressure oxidation and highlight the importance of SiGe surface preparation prior to low-pressure oxidation. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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