| Autor: |
Bauman, Dmitrii A., Panov, Dmitrii Iu., Zakgeim, Dmitrii A., Spiridonov, Vladislav A., Kremleva, Arina V., Petrenko, Artem A., Brunkov, Pavel N., Prasolov, Nikita D., Nashchekin, Alexey V., Smirnov, Andrei M., Odnoblyudov, Maxim A., Bougrov, Vladislav E., Romanov, Alexey E. |
| Zdroj: |
Physica Status Solidi (A) - Applications and Materials Science; October 2021, Vol. 218 Issue: 20 |
| Abstrakt: |
A method for the growth of high‐quality gallium oxide (β‐Ga2O3) bulk crystals from the melt is developed. The influence of the atmosphere in the process zone on the stability of growth and the quality of Czochralski grown crystals is studied. The structural properties of the crystals obtained are investigated. Samples of gallium oxide substrates are demonstrated. The possibility of growing bulk crystals of solid‐solution oxides (AlxGa1–x)2O3is tested. Power electronics device performance improving is possible through the utilization of advanced materials, the most promising of which are β‐Ga2O3and β‐(AlxGa1–x)2O3. Herein, the results of the development of technology for obtaining high‐quality β‐Ga2O3crystals for substrates formation and further device design are presented. |
| Databáze: |
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