| Autor: |
De Antonis, P., Morton, E.J., Podd, F.J.W. |
| Zdroj: |
IEEE Transactions on Nuclear Science; 1996, Vol. 43 Issue: 3 p1487-1490, 4p |
| Abstrakt: |
This paper describes the use of the Pockels electro-optic effect to both visualise and measure the internal electric field present within CdZnTe detectors under normal bias conditions. Use was made of a silicon charge coupled device (CCD), as an image sensor, in conjunction with a 940 nm LED to illuminate a 3/spl times/3/spl times/5 mm detector crystal with polarised infra-red light. The experiment was arranged so that a /spl times/40 image of the crystal showing a contour plot of electric field intensity could be generated. Further, more precise E-field measurements, were obtained using a 1.2 /spl mu/m laser diode (LD) and a germanium photodiode detector. Together these experiments indicate substantially non-uniform electric fields within the detector crystals used. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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