Conductive Filament Variation of RRAM and Its Impact on Single Event Upset

Autor: Vijay, H. M., Ramakrishnan, V. N.
Zdroj: Transactions on Electrical and Electronic Materials; 20210101, Issue: Preprints p1-7, 7p
Abstrakt: Resistive random-access memory (RRAM) is a non-charge-based two-terminal non-volatile memory device. It is a promising candidate for usage in high radiation applications such as medical devices, aircraft, and space. The impact of radiation affects the resistance of RRAM. The resistance depends on the dimensions of the conductive filament. In this work, we have analyzed the impact of radiation on RRAM resistance with respect to the length and width of the conductive filament (CF). For our simulations, radiation is modeled as a double exponential current pulse (DECP). Different values of DECP are injected to mimic different radiation doses. Our simulations on the RRAM device demonstrate that high radiation dose affects the device performance in terms of low resistance state (LRS) and high resistance state (HRS). There is no distinction between LRS and HRS due to high radiation dose.
Databáze: Supplemental Index
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