| Autor: |
Koichi Yamaguchi, Koichi Yamaguchi, Kunihiko Yujobo, Kunihiko Yujobo, Toshiyuki Kaizu, Toshiyuki Kaizu |
| Zdroj: |
Japanese Journal of Applied Physics; December 2000, Vol. 39 Issue: 12 pL1245-L1245, 1p |
| Abstrakt: |
Coherently strained InAs quantum dots (QDs) with narrow inhomogeneous broadening were grown by molecular beam epitaxy (MBE) using the Stranski-Krastanov (SK) growth mode. The increase in the InAs dot size and decrease in the dot density were induced by surface migration enhancement due to the low arsenic pressure below 6×10-7Torr. In addition, the low arsenic pressure and the low growth rate produced the self size-limiting effect, which was attributed to the inhibition of indium incorporation. As a result, the narrowest photoluminescence (PL) linewidth of 18.6 meV (14 K) was successfully obtained from the single InAs/GaAs QD layer. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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