Highly Uniform 1.5 µm Wavelength Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Lasers

Autor: Madhan Raj, Mothi, Jörg Wiedmann, Jörg Wiedmann, Yoshikazu Saka, Yoshikazu Saka, Koji Ebihara, Koji Ebihara, Shigehisa Arai, Shigehisa Arai
Zdroj: Japanese Journal of Applied Physics; December 2000, Vol. 39 Issue: 12 pL1297-L1297, 1p
Abstrakt: The lasing performance of deeply etched distributed Bragg reflector (DBR) lasers was improved to a threshold current as low as 7.2 mA and a differential quantum efficiency as high as 50% with high uniformity. The reflectivity of the 15-DBR reflector was estimated to be as high as 95% from the threshold current dependence on the active region length. A preliminary test under room-temperature CW operation showed stable operation for a duration in excess of 4000 hours.
Databáze: Supplemental Index