| Autor: |
Syuhei Yagi, Syuhei Yagi, Katsuya Abe, Katsuya Abe, Akira Yamada, Akira Yamada, Makoto Konagai, Makoto Konagai |
| Zdroj: |
Japanese Journal of Applied Physics; November 2000, Vol. 39 Issue: 11 pL1078-L1078, 1p |
| Abstrakt: |
Epitaxial Si1-yCyfilms were grown on Si(100) by two methods, mercury sensitized photochemical vapor deposition and plasma-enhanced chemical vapor deposition, at substrate temperatures of around 200°C using SiH4, H2and C2H2. The vibration mode at 607 cm-1, which indicated the presence of the C atoms located at the Si substitutional sites, was observed in both Fourier transform infrared absorption and Raman scattering spectroscopy of the samples annealed at 600 to 700°C. The C composition was controlled by varying the C2H2/SiH4ratio. The maximum substitutional C compositions of 2.3 at% and 2.7 at% were successfully obtained by mercury sensitized photochemical vapor deposition and plasma-enhanced chemical vapor deposition, respectively. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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