| Autor: |
Keiper, Dietmar, Velling, Peter, Prost, Werner, Agethen, Michael, Tegude, Franz-Josef, Landgren, Gunnar |
| Zdroj: |
Japanese Journal of Applied Physics; November 2000, Vol. 39 Issue: 11 p6162-6162, 1p |
| Abstrakt: |
A process for growth of heterostructure bipolar transistors (HBT) using tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) in N2ambient is realised, which is compatible with a high temperature overgrowth, thus suitable for the vertical integration of a laser structure on top of an HBT. A high growth temperature for the C-InGaAs base is favourable, to ensure no degradation during subsequent growth. Increasing the growth temperature after the base from 500°C to 680°C within the emitter layer instead of at the base-emitter interface was found to improve the ideality factors, the dc gain and the turn-on voltage. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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