| Autor: |
Sugino, Takashi, Tai, Tomoyoshi |
| Zdroj: |
Japanese Journal of Applied Physics; November 2000, Vol. 39 Issue: 11 pL1101-L1101, 1p |
| Abstrakt: |
Polycrystalline boron nitride (BN) films are synthesized by plasma-assisted chemical vapor deposition using BCl3and N2as source gases. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared absorption (FTIR) measurements are carried out to characterize the BN films. Capacitance-voltage (C-V) characteristics are measured for Au/BN/p-Si samples. The dielectric constant is estimated from the capacitance in the accumulation region and the film thickness. A dielectric constant as low as 2.2 is achieved for the BN film. It is found that incorporation of carbon atoms into BN films is effective in reducing the dielectric constant. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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