| Autor: |
Yoshitaka Kasukabe, Yoshitaka Kasukabe, Hiromitsu Tani, Hiromitsu Tani, Hiroaki Abe, Hiroaki Abe, Yukio Yamada, Yukio Yamada |
| Zdroj: |
Japanese Journal of Applied Physics; July 2000, Vol. 39 Issue: 7 p4395-4395, 1p |
| Abstrakt: |
Nitrogen ions (N2+) with 62 keV were implanted into evaporated-Ti films in the 400 kV analytical and high resolution transmission electron microscopy (TEM) combined with ion accelerators at JAERI-Takasaki. Observations by in-situTEM equipped with electron energy loss spectroscopy, along with the discrete variational X? molecular orbital calculations, revealed changes in the crystallographic and electronic structures of evaporated-Ti films due to N-implantation. A (001)-oriented NaCl-type TiNyis epitaxially formed by the transformation of (03·5)-oriented hcp-Ti to (001)-oriented fcc-Ti and by the occupation of N in the octahedral (O-) sites, whereas a (110)-oriented TiNyis formed by nitriding a (110)-oriented TiHx. The release of H from the TiHxoccurs preferentially rather than the occupation of N in the O-sites of fcc-Ti sublattice. The loss peak due to volume plasmon of areas where TiHxhas grown in the as-grown Ti film shifts to lower loss energy in the early N-implanting stage, while that of areas, where hcp-Ti has grown, gradually shifts to higher loss energies with increasing N dose. Analysis of Mulliken bond overlap populations determines that occupation of N in the O-sites gives rise to weakening Ti-Ti bonds and formation of Ti-N covalent bonds. The growth process of TiNyaccompanied by changes of the crystallographic and electronic structures of Ti films due to N-implantation is discussed. |
| Databáze: |
Supplemental Index |
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