| Autor: |
Masaki Noji, Masaki Noji, Makoto Kiyama, Makoto Kiyama, Michio Tajima, Michio Tajima |
| Zdroj: |
Japanese Journal of Applied Physics; May 2000, Vol. 39 Issue: 5 p2585-2585, 1p |
| Abstrakt: |
We characterized the interface between the epitaxial layer and substrate of a GaAs wafer by measuring the microscopic photoluminescence (PL) on the cleaved face of the wafer. The intensity of the band-edge PL was higher in the epitaxial layer than in the substrate and locally decreased at the interface. This finding indicates that the non-radiative recombination centers are accumulated at the interface. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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