| Autor: |
Han, Sangyeon, Yang, Sun-a, Hwang, Taekeun, Lee, Jongho, Lee, Jong Duk, Shin, Hyungcheol |
| Zdroj: |
Japanese Journal of Applied Physics; May 2000, Vol. 39 Issue: 5 p2556-2556, 1p |
| Abstrakt: |
We fabricated field-emission vacuum microelectronic devices such as diode and triode devices, using high-resolution electron-beam lithography in combination with the reactive ion etching (RIE) technique. The turn-on voltage of the diode is 13 V, which is the lowest value reported for single-crystalline lateral silicon field-emission devices. An emission current of 1.4 µA was obtained at an anode bias of 40 V. Field emission was confirmed by the linearity of the Fowler-Nordheim plots. The anode current of the triode was effectively modulated as a function of gate voltage. The device stability results show that the proposed devices are stable and reproducible. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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