| Autor: |
Masashi Agata, Masashi Agata, Hideo Wada, Hideo Wada, Osamu Maida, Osamu Maida, Koji Eriguchi, Koji Eriguchi, Akira Fujimoto, Akira Fujimoto, Takeshi Kanashima, Takeshi Kanashima, Masanori Okuyama, Masanori Okuyama |
| Zdroj: |
Japanese Journal of Applied Physics; April 2000, Vol. 39 Issue: 4 p2040-2040, 1p |
| Abstrakt: |
Thin gate oxide charging damage induced by plasma exposure in the metal-oxide-semiconductor (MOS) structure has been studied by photoreflectance (PR) spectroscopy. The PR signal intensity around the photon energy of 3.4 eV is found to decrease as the plasma exposure time increases. The capacitance-voltage (C-V) characteristic shows the generation of SiO2/Si interface states as well as that of electron trap sites in the oxides induced by the DC mode Ar plasma exposure. The SiO2/Si interface state plays the role of a recombination center for the photo generated carriers, resulting in the decrease in the surface potential change. On the other hand, the electron trapped in the oxide increases the surface potential. Therefore, the decrement in the PR signal intensity is considered to correspond primarily to the SiO2/Si interface state generation induced by the plasma-process, because the signal intensity decreases with the decrease of the surface potential. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
