| Autor: |
Ogawa, Masahiro, Funato, Mitsuru, Ishido, Teruki, Fujita, Shizuo, Fujita, Shigeo |
| Zdroj: |
Japanese Journal of Applied Physics; February 2000, Vol. 39 Issue: 2 pL69-L69, 1p |
| Abstrakt: |
Cubic GaN (c-GaN) layers are grown on GaAs(001) substrates by metalorganic vapor phase epitaxy. To attain high-quality c-GaN, we investigate growth conditions and buffer layer structures. It is found that by increasing the growth rate from 0.35 to 1.05 µm/h, the growth temperature region where the c-GaN composition reaches its maximum (90%) is shifted from 700-800°C to 850-900°C. Regarding the film properties, excitonic emission and high resistivity are realized with the faster growth rate. Subsequently, the c-GaN composition is improved by the use of a double buffer layer (DBL) structure instead of the conventional single buffer layer structure without degrading the achieved optical and electrical properties. The DBL structure preserves a relatively high c-GaN composition even in thick layers. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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