| Autor: |
Shirai, Hajime, Sakuma, Yoshikazu, Moriya, Yoshimizu, Fukai, Chisato, Ueyama, Hiroyuki |
| Zdroj: |
Japanese Journal of Applied Physics; December 1999, Vol. 38 Issue: 12 p6629-6629, 1p |
| Abstrakt: |
A novel microwave discharge utilizing a spokewise antenna was applied for the fast deposition of hydrogenated microcrystalline silicon (µc-Si:H) film from SiH4and Ar without the H2dilution method. Systematic deposition studies were employed with total pressure, H2dilution ratio and flow rate of SiH4, Fr[SiH4], as variables, combined with optical emission spectroscopy (OES) and Langmuir probe characterizations. It was found that the deposition rate exhibits a maximum at 40-50 mTorr at the axial distance of 10 cm from the quartz glass plate and the film crystallinity strongly depend on the total pressure. Correlation among OES signal intensity, SiH, the intensity ratio, IH?/ISi*, deposition rate and film crystallinity were demonstrated. By combining the SiH4depletion and lower pressure conditions, a high deposition rate of 40 Å/s was achieved in µc-Si:H growth with high crystallinity and photosensitivity from SiH4and Ar plasma. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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