| Autor: |
Nobuki Morooka, Nobuki Morooka, Katsuhiro Uesugi, Katsuhiro Uesugi, Ikuo Suemune, Ikuo Suemune |
| Zdroj: |
Japanese Journal of Applied Physics; November 1999, Vol. 38 Issue: 11 pL1309-L1309, 1p |
| Abstrakt: |
The role of indium on the growth surfaces of GaNAs was studied with metalorganic molecular-beam epitaxy. GaNAs was grown with and without triethylindium (TEIn) supply. High-resolution X-ray diffraction measurements reveal an increase in nitrogen incorporation in GaNAs with TEIn supply and negligible indium incorporation. This indicates that indium plays the role of a surfactant on the growth surface and enhances nitrogen incorporation in GaNAs. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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