| Autor: |
Kobayashi, Kazuhiro, Niwano, Yasunori |
| Zdroj: |
Japanese Journal of Applied Physics; October 1999, Vol. 38 Issue: 10 p5757-5757, 1p |
| Abstrakt: |
The suppression of photo-leakage current (Iphoto) has been an important issue in the fabrication of high-brightness liquid-crystal projectors. We have investigated the generation mechanism of Iphotoin poly-Si thin film transistors (TFTs) with an offset structure. It is found that Iphotois mainly generated at the offset region and the decrease in the offset length is important to suppress Iphoto. This is because the electric field is applied to the offset region and carriers, generated in the region, can be extracted. We have realized an offset poly-Si TFT with both high mobility and low Iphotoby decreasing the offset length to 0.5 µm with the lateral etching method. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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