| Autor: |
Soichiro Okamura, Soichiro Okamura, Shoiti Miyata, Shoiti Miyata, Yoji Mizutani, Yoji Mizutani, Takashi Nishida, Takashi Nishida, Tadashi Shiosaki, Tadashi Shiosaki |
| Zdroj: |
Japanese Journal of Applied Physics; September 1999, Vol. 38 Issue: 9 p5364-5364, 1p |
| Abstrakt: |
Polycrystalline Pb(Zr,Ti)O3(PZT) thin films fabricated by a chemical solution deposition (CSD) process exhibited a conspicuous initial voltage shift in the D-Ehysteresis loop toward the negative-bias field. It was concluded that the origin of the voltage shift was an internal bias field due to asymmetric space-charge distribution induced by the natural alignment of spontaneous polarization during the cooling process. The internal bias field also caused asymmetric depolarizaiton at the zero-bias field. In heteroepitaxial (Pb,La)TiO3thin films, we observed a conspicuous voltage shift toward the positive-bias field and asymmetric depolarization at the zero-bias field. They were eliminated by the application of a positive unipolar pulse train. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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