| Autor: |
Hirotake Okino, Hirotake Okino, Tomoki Nishikawa, Tomoki Nishikawa, Masaru Shimizu, Masaru Shimizu, Toshihisa Horiuchi, Toshihisa Horiuchi, Kazumi Matsushige, Kazumi Matsushige |
| Zdroj: |
Japanese Journal of Applied Physics; September 1999, Vol. 38 Issue: 9 p5388-5388, 1p |
| Abstrakt: |
The film thickness (20-200 nm) dependence of the crystalline structure, lattice parameters and electrical properties of highly strained Pb(Zr,Ti)O3(PZT) thin films on MgO(100) was investigated. The PZT films were practically c-axis orientation. As the film thickness decreased (< 100 nm), the tetragonality ratio of PZT also decreased owing to the inner expanding strain in the in-plane direction. The dielectric constant decreased and the structural phase transition temperature shifted to a lower temperature corresponding with the decrease in the tetragonality ratio. The electric displacement-electric field (D-E) hysteresis curves for the thick (> 40 nm) films exhibited a certain amount of remanent polarization in the in-plane direction, implying the formation of a-domains. The relationship between electrical properties and the inner strain is discussed. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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