| Autor: |
Miki, Takeshi, Wang, Jifeng, Omino, Akira, Isshiki, Minoru |
| Zdroj: |
Japanese Journal of Applied Physics; May 1999, Vol. 38 Issue: 5 p2725-2725, 1p |
| Abstrakt: |
High-quality nitrogen-doped ZnSe (ZnSe:N) epitaxial layers were grown on ZnSe substrates in a low-pressure metalorganic chemical vapor deposition (MOCVD) system under optimum growth conditions using hydrogen as a carrier gas and ammonia as a dopant source. In order to enhance the activation efficiency of nitrogen in ZnSe epitaxial layers, ZnSe:N/ZnSe was annealed in melted zinc using the rapid thermal annealing technique. The dependence of net acceptor concentration on annealing duration, VI/II flux ratio, and ammonia flux was examined. The highest net acceptor concentration value calculated from capacitance-voltage (C-V) measurements reached 2×1017cm-3. This is the highest value obtained so far for ZnSe homosystem epitaxial layers grown by the MOCVD method. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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