| Autor: |
Sano, Nobuyuki, Natori, Kenji, Matsuzawa, Kazuya, Mukai, Mikio |
| Zdroj: |
Japanese Journal of Applied Physics; May 1999, Vol. 38 Issue: 5 pL531-L531, 1p |
| Abstrakt: |
Monte Carlo simulations of current fluctuation in Si n-i-n diode structures are carried out with various lengths of the intrinsic(channel) region so that electron transport under diffusive and quasi-ballistic regimes is covered. It is shown that a new current fluctuation mode associated with the fluctuation in the number of electrons in the channel region appears in sub-0.1 µm device structures. This is caused by the diffusion of high-energy electrons in the anode n-doped region, and is characteristic of sub-0.1 µm device structures since high-energy electrons in the anode originate from quasi-ballistic transport in the channel. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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