| Autor: |
Sakata, Yasutaka, Komatsu, Keiro |
| Zdroj: |
Japanese Journal of Applied Physics; March 1999, Vol. 38 Issue: 3 p1334-1334, 1p |
| Abstrakt: |
A pulse-mode selective metal-organic vapor phase epitaxy (MOVPE) method for achieving excellent crystal quality of an InGaAsP strained multi-quantum well (MQW) structure on a narrow stripe region was investigated. The migration enhancement mechanism for pulse-mode epitaxy was studied from the view point of the decomposition state of group-III sources. By using the proposed method, the flatness of the selectively grown layers was drastically improved, and a very narrow photoluminescence spectrum linewidth of 28 meV at 25°C was realized for the strained MQW structure. The 1.3 µm-wavelength buried heterostructure (BH) laser diode (LD) with a strained MQW active layer grown by the pulse-mode selective MOVPE showed a very low-threshold current of 12 mA (18 mA) and high-slope efficiency of 0.37 (0.33) W/A at the high temperature of 85°C (100°C). |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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