| Autor: |
Michael K. Kelly, Michael K. Kelly, Robert P. Vaudo, Robert P. Vaudo, Vivek M. Phanse, Vivek M. Phanse, Lutz Görgens, Lutz Görgens, Oliver Ambacher, Oliver Ambacher, Martin Stutzmann, Martin Stutzmann |
| Zdroj: |
Japanese Journal of Applied Physics; March 1999, Vol. 38 Issue: 3 pL217-L217, 1p |
| Abstrakt: |
Free-standing GaN, nearly equal in area to the original 2 inch wafer, was produced from 250-300 µm thick GaN films grown on sapphire by hydride vapor phase epitaxy (HVPE). The thick films were separated from the growth substrate by laser-induced liftoff, using a pulsed laser to thermally decompose a thin layer of GaN at the film-substrate interface. Sequentially scanned pulses were employed and the liftoff was performed at elevated temperature (>600°C) to relieve postgrowth bowing. After liftoff, the bow is only slight or absent in the resulting free GaN. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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