| Autor: |
Dominic F. Lee, Dominic F. Lee, Mariappan Paranthaman, Mariappan Paranthaman, John E. Mathis, John E. Mathis, Amit Goyal, Amit Goyal, Donald M. Kroeger, Donald M. Kroeger, Eliot D. Specht, Eliot D. Specht, Robert K. Williams, Robert K. Williams, Frederick A. List, Frederick A. List, Patrick M. Martin, Patrick M. Martin, Chan Park, Chan Park, David P. Norton, David P. Norton, David K. Christen, David K. Christen |
| Zdroj: |
Japanese Journal of Applied Physics; February 1999, Vol. 38 Issue: 2 pL178-L178, 1p |
| Abstrakt: |
Although high critical current density (Jc) YBCO can be deposited on rolling assisted biaxially-textured substrates (RABiTS) with the YSZ/CeO2/Ni architecture, improvement in uniformity is needed due to the presence of two-component YBCO epitaxy and cracking in the CeO2buffer. We have determined that Yb2O3is an excellent buffer material that provides a single-component YBCO epitaxy. In addition, crack-free epitaxial Y2O3can be consistently deposited onto textured Ni substrates. High quality YBCO films have been deposited, and Jcas high as 1.8 ×106A/cm2at 77 K has been obtained on this Yb2O3/Y2O3/Ni alternative RABiTS architecture. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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