| Abstrakt: |
In this paper, the mechanism for efficient production of O-in the afterglow of a low-pressure and high-density oxygen plasma has been described. We proposed a new production process, the dissociative attachment of slow electrons to highly excited metastable oxygen molecules O2(A3?u+, A'3?u, c1?u-). The electron attachment frequency has been obtained from the experimental results, and was significantly high for the electron temperature of less than 2 eV. The cross section, ?DA, for this process was evaluated by a quantum mechanical approach. ?DAat 0.1 eV was larger by two-orders of magnitude than the peak value at 6.7 eV for the ground state O2(X3?g+). The enhancement of the electron attachment frequency at low temperature can be explained by dissociative attachment of slow electrons to O2(A3?u+, A'3?u, c1?u-). |
