| Autor: |
Tsuno, Morikazu, Yokoyama, Shin, Shibahara, Kentaro |
| Zdroj: |
Japanese Journal of Applied Physics; November 1998, Vol. 37 Issue: 11 p5902-5902, 1p |
| Abstrakt: |
RF-Ar-plasma cleaning lowers Al/TiSi2contact resistivity by 70% in comparison to conventional buffered-HF (BHF) cleaning. This improvement is due to effective removal of contaminants at the bottom of contact holes. Application of the Ar-plasma treatment to the Si surface before silicidation leads to a decrease in contact resistance down to 25 ? for 0.3-µm-diameter contact holes. The decrease is believed to be due to the fact that the effective barrier height between TiSi2and n+-Si is reduced by defects induced by Ar cleaning. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
