| Autor: |
K. Park, Chang-Sik Son, Kyu Kim, Seong-Il Kim, Suk-Ki Min, Suk-Ki Min, In-Hoon Choi, In-Hoon Choi |
| Zdroj: |
Japanese Journal of Applied Physics; April 1998, Vol. 37 Issue: 4 p1701-1701, 1p |
| Abstrakt: |
Maskless one-step selective CCl4-doped GaAs epilayers have been grown on patterned GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition. The growth technique has potential for realizing a well-defined quantum confinement structure and lateral structure device. Round shaped CCl4-doped GaAs epilayer was selectively grown inside a U-groove and on the sidewalls of a mesa with a significant lateral growth rate enhancement, whereas no growth was observed outside U-groove and on top of the mesa. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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