| Autor: |
Takashi Oobo, Takashi Oobo, Riichiro Takemura, Riichiro Takemura, Ken Sato, Ken Sato, Michihiko Suhara, Michihiko Suhara, Yasuyuki Miyamoto, Yasuyuki Miyamoto, Kazuhito Furuya, Kazuhito Furuya |
| Zdroj: |
Japanese Journal of Applied Physics; January 1998, Vol. 37 Issue: 2 p445-445, 1p |
| Abstrakt: |
We studied the effect of spacer layer thickness on the resonant level width in resonant tunneling diodes (RTDs). GaInAs/InP RTDs were fabricated with various spacer layer thicknesses using organo-metallic vapor phase epitaxy, and the resonant level width was estimated. As a result, the resonant level width was found to decrease with increasing spacer layer thickness. To discuss this tendency, a theoretical model of the interface fluctuation between spacer layers and electrodes, caused by the random distribution of the impurity ions in electrodes, was proposed. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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