Epitaxial Growth of SrF2on ZnSe(100) Epitaxial Films

Autor: Mohammad Mustafa Sarinanto, Mohammad Mustafa Sarinanto, Kazuo Tsutsui, Kazuo Tsutsui
Zdroj: Japanese Journal of Applied Physics; January 1998, Vol. 37 Issue: 1 p253-253, 1p
Abstrakt: Epitaxial SrF2films were grown on ZnSe(100) epitaxial substrates using molecular beam epitaxy (MBE), and their crystallinity dependent on growth temperature was characterized using X-ray diffraction and Rutherford backscattering spectroscopy. SrF2film with good crystallinity was obtained at the growth temperature of 250°C.
Databáze: Supplemental Index