| Autor: |
Ando, Fumio, Shimizu, Hisashi, Kobayashi, Ichizo, Masaru Okada, Masaru Okada |
| Zdroj: |
Japanese Journal of Applied Physics; September 1997, Vol. 36 Issue: 9 p5820-5820, 1p |
| Abstrakt: |
Highly pure Ti(DPM)2(OCH3)2was synthesized by an exchange reaction of Ti(DPM)2(i-OC3H7)2with CH3OH. The Ti(DPM)2(OCH3)2is a white crystalline material with a melting point of 80.1° C, having a high vapor pressure the source temperature of 90° C, which enable its stable supply for a long time. At the film deposition temperatures of PZT and BST (500° C-650° C), no gas phase nucleation reaction was observed. The order of the performance of the step coverage for several titanium source materials was Ti(DPM)2(OCH3)2>Ti(DPM)2(i-OC3H7)2>Ti(DPM)2Cl2>Ti(i-OC3H7)4. In the case of Ti(DPM)2(OCH3)2, the step coverage for the Si substrate with an aspect ratio of 1.0 was 80% under the TiO2film deposition conditions of 650° C and 1 Torr. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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