| Autor: |
Hiroji Morimoto, Hiroji Morimoto, Takehisa Kishimoto, Takehisa Kishimoto, Mikio Takai, Mikio Takai, Shinsuke Yura, Shinsuke Yura, Akihiko Hosono, Akihiko Hosono, Soichiro Okuda, Soichiro Okuda, Stephan Lipp, Stephan Lipp, Lothar Frey, Lothar Frey, Heiner Ryssel, Heiner Ryssel |
| Zdroj: |
Japanese Journal of Applied Physics; December 1996, Vol. 35 Issue: 12 p6623-6623, 1p |
| Abstrakt: |
Pt emitters were deposited using electron-beam-induced reaction on overetched Si emitters fabricated by a conventional dry etching process. An emission current of 10 µA was obtained from a 100-tip field emitter array (FEA) at an extraction voltage of 100 V. A prototype of a nanometer-sized field emitter was fabricated using focused ion beam (FIB) etching and electron-beam-induced deposition (EBID). |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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