| Autor: |
Hideki Suzuki, Hideki Suzuki, Toshio Obinata, Toshio Obinata, Hiroyuki Nashiki, Hiroyuki Nashiki, Katsuhiro Uesugi, Katsuhiro Uesugi, Ikuo Suemune, Ikuo Suemune |
| Zdroj: |
Japanese Journal of Applied Physics; December 1996, Vol. 35 Issue: 12 pL1658-L1658, 1p |
| Abstrakt: |
Heterointerface properties of ZnSe/MgS superlattices (SLs) grown by -0.52pt metalorganic vapor phase epitaxy (MOVPE) are characterized using X-ray diffraction measurements and in situmonitoring of optical multiple reflection in the SL films. These studies showed the formation of MgSe-related extra interface layers in the SLs. It was found that a purge with a Zn precursor effectively suppresses the extra interface layer formation. By a purge with a Zn precursor, linewidths of the photoluminescence (PL) spectra became much narrower than those of SLs grown without purging. Monolayer exciton PL peaks were clearly observed in a SL with narrow wells. This demonstrates that a purge with a Zn precursor effectively improves the abruptness and the atomic flatness of the ZnSe/MgS heterointerfaces. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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