| Autor: |
Noguchi, Takehiro, Takashi Hase, Takashi Hase, Yoichi Miyasaka, Yoichi Miyasaka |
| Zdroj: |
Japanese Journal of Applied Physics; September 1996, Vol. 35 Issue: 9 p4900-4900, 1p |
| Abstrakt: |
Ferroelectric properties, crystal structure and microstructures were examined for various Sr/Bi/Ta atomic ratio strontium bismuth tantalate (SBT) films prepared by metalorganic decomposition at 700 and 800° C. The 20% Sr-deficient and 10% Bi-excess (0.8/2.2/2) composition showed maximum remanent polarization (Pr) values for both 700 and 800° C crystallization temperatures. From TEM analysis, the Prdependence on composition variation around the stoichiometric 1/2/2 composition was related to grain size and volume of voids. The effect of postannealing after Pt top electrode fabrication was also studied. On the films prepared at 800° C, postannealing markedly reduced the capacitor shorting rate. This was attributed to recrystallization of the Pt top layer, based on SEM analysis of the Pt layer and the Pt/SBT interface. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
