Preparation of SrTiO3Films on 8-Inch Wafers by Chemical Vapor Deposition

Autor: Arai, Tomoko Tsuyama, Inaishi, Yoshiaki, Sawado, Yoshinori, Ichizo Kobayashi, Ichizo Kobayashi, Junichi Hidaka, Junichi Hidaka
Zdroj: Japanese Journal of Applied Physics; September 1996, Vol. 35 Issue: 9 p4875-4875, 1p
Abstrakt: SrTiO3films were grown on 8-inch-diameter Si substrates by chemical vapor deposition [CVD] using bis(dipivaloylmethanato) strontium [ Sr(DPM)2], titanium tetraisopropoxide [ Ti(OiPr)4] and O2. We have developed an oil-circulating showerhead-type nozzle to prevent condensation and decomposition of source materials. Conditions of supplying Sr(DPM)2were investigated with respect to cylinder pressure and the charge in the cylinder, using a simple vapor transport system. The deposition rate of SrTiO3films on 8-inch wafers was improved to 2 nm/min by increasing the charge in the source cylinder and decreasing the cylinder pressure. A thickness uniformity of 3.4% and a composition uniformity of 4.6% were obtained by complete mixing of gases. A step coverage of 85% was obtained using Sr(DPM)2, titanyl bis(dipivaloylmethanato) [ TiO(DPM)2] and N2O.
Databáze: Supplemental Index