| Autor: |
Herzl Aharoni, Herzl Aharoni, Tadahiro Ohmi, Tadahiro Ohmi, Tadashi Shibata, Tadashi Shibata, Mauricio Massazumi Oka, Mauricio Massazumi Oka, Akira Nakada, Akira Nakada, Yukio Tamai, Yukio Tamai |
| Zdroj: |
Japanese Journal of Applied Physics; September 1996, Vol. 35 Issue: 9 p4606-4606, 1p |
| Abstrakt: |
A comparative examination is presented between two series of As+implanted junctions into (100) Si substrates with varying Boron concentration Ns. The post-implantation annealing temperatures were 1000°C for one series and 450°C for the other. This is done in order to identify the specific cause for the inferior performance of the 450°C junctions which was shown to progressively degrade as Nsincreases. It is found that the increase in Nt, the trapping centers concentration in the 450°C junctions is not the only reason for the above behavior and that the trend of Et, the trapping centers energy level with respect to Ei, the intrinsic energy level is dominant. The data show that in contrast to the 1000°C junctions, ?Et- Ei? decreases with increasing Nsin the 450°C junctions, increasing the generation rate, resulting the inferior performance. Junctions in 1.6×1014cm-3substrates, outstandingly exhibit comparable performance in both annealing temperatures. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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