| Autor: |
Ito, Yasuyuki, Ushikubo, Maho, Yokoyama, Seiichi, Matsunaga, Hironori, Atsuki, Tsutomu, Yonezawa, Tadashi, Ogi, Katsumi |
| Zdroj: |
Japanese Journal of Applied Physics; September 1996, Vol. 35 Issue: 9 p4925-4925, 1p |
| Abstrakt: |
A new low temperature processing method for preparation of SrBi2Ta2O9thin films is proposed. These thin films were prepared on Pt/Ta/ SiO2/Si substrates by a sol-gel method, and their structural and electrical properties were investigated. Films were annealed before and after the top Pt electrode deposition. The 1st annealing was performed in a 760 Torr oxygen atmosphere at 600° C for 30 min, and the 2nd annealing was performed in a 5 Torr oxygen atmosphere at 600° C for 30 min. The films were well crystallized and fine grained after the 2nd annealing. The electrical properties of the 200-nm-thick film obtained using this new processing method, i.e., the remanent polarization (Pr), coercive field (Ec), and leakage current density (IL), were as follows: Pr=8.5 µ C/cm2, Ec=30 kV/cm, and IL=1×10-7A/cm2(at 150 kV/cm). This new processing method is very attractive for highly integrated ferroelectric nonvolatile memory applications. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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