| Autor: |
Koji Maruyama, Koji Maruyama, Katsunori Ohkouchi, Katsunori Ohkouchi, Toshio Goto, Toshio Goto |
| Zdroj: |
Japanese Journal of Applied Physics; July 1996, Vol. 35 Issue: 7 p4088-4088, 1p |
| Abstrakt: |
The densities of CF, CF2, and CF3radicals have been measured in RF CF4-H2, CHF3-H2and CHF3-O2plasmas using infrared diode laser absorption spectroscopy. In H2additive fluorocarbon plasmas, it was found that fluorocarbon film formation on the electrodes increases the radical densities in the plasma by reducing the surface loss probability and producing the radicals through sputtering of the fluorocarbon film. In CHF3-O2plasma, the CF radical density decreased rapidly when a small amount of O2gas was added due to the removal of fluorocarbon film, whereas an increase in the density of CF3was observed. The spatially averaged electron density has also been measured using a microwave interferometer together with the Ar*emission intensity under the same conditions as the radical measurements. The variations in the electron temperature and density are explained qualitatively by the change in the electron loss process in the gas phase induced by H2or O2admixture. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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