Nitrogen Incorporation in a-Ge:H Produced in High-Hydrogen-Dilution Plasma

Autor: Xu, Jun, Seiichi Miyazaki, Seiichi Miyazaki, Masataka Hirose, Masataka Hirose
Zdroj: Japanese Journal of Applied Physics; April 1996, Vol. 35 Issue: 4 p2043-2043, 1p
Abstrakt: The network of hydrogenated amorphous germanium (a-Ge:H) has been modified with nitrogen by employing the rf glow discharge decomposition of a hydrogen-diluted gas mixture of NH3and GeH4. It is found that the hydrogen dilution of the material gas hinders the incorporation of three-fold coordinated nitrogen atoms in the network and causes optical bandgap shrinkage. Dramatic enhancement of the conductivity and decrease of the activation energy are observed in the high-hydrogen-dilution regime, and are explained by the incorporation of four-fold coordinated nitrogen in the relaxed network.
Databáze: Supplemental Index