| Autor: |
Ogata, Tamotsu, Sorita, Tetsuji, Kobayashi, Kiyoteru, Matsui, Yasuji, Horie, Kazuo, Makoto Hirayama, Makoto Hirayama |
| Zdroj: |
Japanese Journal of Applied Physics; March 1996, Vol. 35 Issue: 3 p1690-1690, 1p |
| Abstrakt: |
The model of silicon nitride film deposition in a batch furnace from dichlorosilane ( SiH2Cl2; DCS) and ammonia ( NH3) is presented. The gas-phase and surface reaction rates of DCS are estimated from thickness profiles along the gas stream direction, and surface reaction and DCS decomposition are found to be of Langmuir and Lindemann types, respectively. It means that at a normal deposition temperature ( ?1000 K), some DCS molecules adsorb directly on the Si surface while others decompose into a more reactive intermediate, SiCl2. At higher temperatures, the reverse reaction of DCS decomposition and the subsequent reaction of SiCl2with NH3may play significant roles. Using the present reaction rates, we estimate the film thickness profiles across a 12-inch wafer. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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